unisonic technologies co., ltd dtc143t npn silicon transistor www.unisonic.com.tw 1of 3 copyright ? 2012 unisonic technologies co., ltd qw-r206-059,f npn digital transistor (built- in bias resistors) ? features * built-in bias resistors that im plies easy on/off applications. * the bias resistors are thin-film resistors with complete isolation to allow negative input. ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 dtc143tl-ae3-r dtc143tg-ae3-r sot-23 e b c tape reel dtc143tl-al3-r DTC143TG-AL3-R sot-323 e b c tape reel dtc143tl-an3-r dtc143tg-an3-r sot-523 e b c tape reel dtc143tl-t9s-k dtc143tg-t9s-k to-92sp e c b bulk note: pin assignment: e: emitte r, b: base, c: collector ? marking (for sot package)
dtc143t npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-059,f ? absolute maximum ratings (t a =25 , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma collector power dissipation sot-523 p c 150 mw sot-23/sot-323 200 to-92sp 550 junction temperature t j +150 storage temperature t stg -55~+150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =50 a 50 v collector-emitter breakdown voltage bv ceo i c =1ma 50 v emitter-base breakdown voltage bv ebo i e =50 a 5 v collector cut-off current i cbo v cb =50v 0.5 a emitter cut-off current i ebo v eb =4v 0.5 a collector-emitter satu ration voltage v ce ( sat ) i c =5ma, i b =0.25ma 0.3 v dc current gain h fe v ce =5v, i c =1ma 100 250 600 input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t v ce =10v, i e =5ma, f=100mhz (note) 250 mhz note: transition frequency of the device.
dtc143t npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-059,f ? typical characteristics 0.1 dc current gain vs. collector current 1 1 20 collector current, i c (ma) 1000 2 5 500 200 100 50 10 5 2 10 20 50 100 0.2 0.5 0.1 1m 20m collector current, i c (ma) 1 500m 200m 100m 50m 10m 5m 2m 12 10 0.2 0.5 collector-emitter saturation voltage vs. collector current 5 -40 v ce =5v ic/i b =20 25 t a =100 25 t a =100 -40 20 50 100 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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